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MRF7S38075HR3 mrf7s38075hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for wimax base station a pplications with frequencies up to 3800 mhz. suitable for wimax, wibro, bwa, and ofdm multicarrier class ab and class c amplifier applications. ? typical wimax performance: v dd = 30 volts, i dq = 900 ma, p out = 12 watts avg., f = 3400 and 3600 mhz, 802.16d, 64 qam 3 / 4 , 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. power gain ? 14 db drain efficiency ? 14% device output signal par ? 8.7 db @ 0.01% probability on ccdf acpr @ 5.25 mhz offset ? - 49 dbc in 0.5 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 3500 mhz, 75 watts cw peak tuned output power ? p out @ 1 db compression point 75 watts cw features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate - source voltage range for improved class c operation ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v ds - 0.5, +65 vdc gate - source voltage v gs - 6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 86 c, 74 w cw case temperature 69 c, 12 w cw r jc 0.46 0.49 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf7s38075h rev. 0, 8/2007 freescale semiconductor technical data MRF7S38075HR3 mrf7s38075hsr3 3400 - 3600 mhz, 12 w avg., 30 v wimax lateral n - channel rf power mosfets case 465 - 06, style 1 ni - 780 MRF7S38075HR3 case 465a - 06, style 1 ni - 780s mrf7s38075hsr3 ? freescale semiconductor, inc., 2007. all rights reserved.
2 rf device data freescale semiconductor MRF7S38075HR3 mrf7s38075hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 248 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v dd = 30 vdc, i d = 900 madc, measured in functional test) v gs(q) 2 2.7 3.5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 2.3 adc) v ds(on) 0.1 0.21 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.77 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 464 ? pf input capacitance (v ds = 28 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 214 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 30 vdc, i dq = 900 ma, p out = 12 w avg., f = 3400 mhz and f = 3600 mhz, wimax signal, 802.16d, 7 mhz channel bandwidth, 64 qam 3 / 4 , 4 bursts, par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 0.5 mhz channel bandwidth @ 5.25 mhz offset. power gain g ps 12 14 17 db drain efficiency d 12 14 24 % output peak - to - average ratio @ 0.01% probability on ccdf par 7.5 8.7 ? db adjacent channel power ratio acpr ? -49 -46 dbc input return loss irl ? -12 -5 db 1. part internally matched both on input and output. (continued)
MRF7S38075HR3 mrf7s38075hsr3 3 rf device data freescale semiconductor table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances ofdm signal (in freescale test fixture, 50 ohm system) v dd = 30 vdc, i dq = 900 ma, p out = 12 w avg., f = 3400 mhz and f = 3600 mhz, wimax signal, ofdm single - carrier, 7 mhz channel bandwidth, 64 qam 3 / 4 , 4 bursts, par = 9.5 db @ 0.01% probability on ccdf. mask system type g @ p out = 32 w avg. point b at 3.5 mhz offset point c at 5 mhz offset point d at 7.4 mhz offset point e at 14 mhz offset point f at 17.5 mhz offset mask ? ? ? ? ? -27 -38 -42 -60 -60 ? ? ? ? ? dbc relative constellation error @ p out = 12 w avg. (1) rce ? -34 ? db error vector magnitude (1) (typical evm performance @ p out = 12 w avg. with ofdm 802.16d signal call) evm ? 2.1 ? % rms typical performances (in freescale test fixture, 50 ohm system) v dd = 30 vdc, i dq = 900 ma, 3400 - 3600 mhz bandwidth video bandwidth @ 84 w pep p out where im3 = - 30 dbc (tone spacing from 100 khz to vbw) imd3 = imd3 @ vbw frequency - imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 20 ? mhz gain flatness in 200 mhz bandwidth @ p out = 12 w avg. g f ? 0.36 ? db average deviation from linear phase in 200 mhz bandwidth @ p out = 75 w cw ? 3.21 ? average group delay @ p out = 75 w cw, f = 3500 mhz delay ? 2.38 ? ns part - to - part insertion phase variation @ p out = 75 w cw, f = 3500 mhz, six sigma window ? ? 63.4 ? gain variation over temperature (-30 c to +85 c) g ? 0.025 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.026 ? dbm/ c 1. rce = 20log(evm/100)
4 rf device data freescale semiconductor MRF7S38075HR3 mrf7s38075hsr3 figure 1. MRF7S38075HR3(hsr3) test circuit schematic z13 0.358 x 0.150 microstrip z14 0.541 x 0.070 microstrip z15 0.911 x 0.560 microstrip z16 0.379 x 0.560 microstrip z17 0.300 x 0.084 microstrip z18 0.200 x 0.240 microstrip z19 0.047 x 0.240 x 0.140 taper z20 0.463 x 0.084 microstrip z21 0.089 x 0.142 microstrip z22 0.657 x 0.084 microstrip pcb arlon cuclad 250gx - 0300 - 55 - 22, 0.030 , r = 2.55 z1 0.427 x 0.084? microstrip z2 0.066 x 0.192 x 0.084 taper z3 0.045 x 0.192 microstrip z4 0.044 x 0.310 microstrip z5 0.150 x 0.430 microstrip z6 0.107 x 0.240 microstrip z7 0.155 x 0.400 microstrip z8 0.943 x 0.084 microstrip z9 0.158 x 0.600 microstrip z10 0.110 x 0.600 microstrip z11 0.802 x 0.150 microstrip z12 0.150 x 0.155 microstrip v bias v supply rf output rf input dut c8 z1 z2 z3 z4 c1 c4 z11 z14 b1 z5 z7 z15 z16 z22 z17 z18 z19 z20 z21 c11 + c10 + c9 + c7 c6 z10 z9 z8 z6 z12 z13 c2 c5 + c3 r1 b2 c12 table 5. MRF7S38075HR3(hsr3) test circuit com ponent designations and values part description part number manufacturer b1, b2 small ferrite beads 2743019447 fair rite c1, c2, c4, c6 2.7 pf chip capacitors atc100b2r7bt500xt atc c3, c7 100 pf chip capacitors atc100b101ft500xt atc c5 22 f, 35 v electrolytic capacitor emvy350ada221mha0g nippon chemi - con c9 100 f, 50 v electrolytic capacitor mcht101m1hb - 1017 - rf multicomp c10, c11 470 f, 63 v electrolytic capacitors ekme630ell471mk25s multicomp c12, c8 0.01 f, 50 v chip capacitors c1825c103j5rac kemet r1 180 k , 1/4 w chip resistor crcw12061803fkea vishay
MRF7S38075HR3 mrf7s38075hsr3 5 rf device data freescale semiconductor figure 2. MRF7S38075HR3(hsr3) test circuit component layout c5 c3 b1 c12 b2 r1 c2 c1 c10 c11 c9 c7 c8 c6 c4 cut out area mrf7s38705 rev. c
6 rf device data freescale semiconductor MRF7S38075HR3 mrf7s38075hsr3 typical characteristics irl, input return loss (db) acpr (dbc) f, frequency (mhz) figure 3. wimax broadband performance @ p out = 12 watts avg. ?20 ?8 ?12 ?16 11.5 15.5 ?55 16 14 12 ?49 ?51 d , drain efficiency (%) g ps , power gain (db) 15 14.5 14 13.5 13 12.5 3450 3500 3600 10 ?53 ?24 irl g ps d v dd = 30 vdc, p out = 12 w (avg.), i dq = 900 ma, 802.16d 64 qam 3 / 4, 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf 3525 3575 acpr ?l acpr?u 12 ?47 irl, input return loss (db) acpr (dbc) f, frequency (mhz) figure 4. wimax broadband performance @ p out = 23 watts avg. ?20 ?8 ?12 ?16 11 15 ?46 24 22 20 ?40 ?42 d , drain efficiency (%) g ps , power gain (db) 14.5 14 13.5 13 12.5 18 ?44 ?24 irl g ps v dd = 30 vdc, p out = 23 w (avg.), i dq = 900 ma, 802.16d 64 qam 3 / 4, 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf acpr ?l acpr?u 12 ?38 figure 5. two - tone power gain versus output power 9 16 1 i dq = 1350 ma p out , output power (watts) pep 14 13 11 10 100 g ps , power gain (db) v dd = 30 vdc, i dq = 900 ma f1 = 3495 mhz, f2 = 3505 mhz two ?tone measurements, 10 mhz tone spacing 12 15 1125 ma 900 ma figure 6. third order intermodulation distortion versus output power i dq = 450 ma p out , output power (watts) pep 10 ?20 ?30 ?40 ?50 1 intermodulation distortion (dbc) imd, third order 100 ?10 v dd = 30 vdc, i dq = 900 ma f1 = 3495 mhz, f2 = 3505 mhz two ?tone measurements, 10 mhz tone spacing 1350 ma 675 ma 900 ma 3550 3475 3425 3400 3450 3500 3600 3525 3575 3550 3475 3425 3400 11.5 d 10 200 675 ma 450 ma 200 1125 ma
MRF7S38075HR3 mrf7s38075hsr3 7 rf device data freescale semiconductor typical characteristics figure 7. intermodulation distortion products versus output power p out , output power (watts) pep imd, intermodulation distortion (dbc) ?70 ?10 1 ?40 ?50 10 ?30 ?20 ?60 5th order 3rd order 200 figure 8. intermodulation distortion products versus tone spacing two ?tone spacing (mhz) 10 ?60 im3 ?u ?20 ?30 ?50 1 100 imd, intermodulation distortion (dbc) ?40 im3 ?l im5 ?u im5 ?l im7 ?l im7 ?u ?25 ?50 ?55 ?60 ?45 figure 9. wimax, acpr, power gain and drain efficiency versus output power 0 p out , output power (watts) avg. wimax 35 30 10 100 20 acpr d , drain efficiency (%), g ps , power gain (db) acpr (dbc) d 25 15 g ps v dd = 30 vdc, i dq =900 ma f1 = 3495 mhz, f2 = 3505 mhz two ?tone measurements, 10 mhz tone spacing v dd = 30 vdc, p out = 84 w (pep), i dq = 900 ma two ?tone measurements (f1 + f2)/2 = center frequency of 3500 mhz 100 8 17 0 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd = 30 vdc i dq = 900 ma f = 3500 mhz t c = ?30 c ?30 c 10 1 16 15 14 13 12 35 30 25 20 15 d , drain efficiency (%) g ps d g ps , power gain (db) figure 11. power gain versus output power p out , output power (watts) cw g ps , power gain (db) 40 9 14 0 10 11 i dq = 900 ma f = 3500 mhz 120 v dd = 28 v 30 v 0 1 ?40 ?35 ?30 40 25 c 85 c 12 13 32 v 5 v dd = 30 vdc, i dq = 900 ma f = 3500 mhz, 802.16d, 64 qam 3 / 4 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf 45 ?10 11 10 9 200 10 5 25 c 85 c 80 100 7th order 10
8 rf device data freescale semiconductor MRF7S38075HR3 mrf7s38075hsr3 typical characteristics 250 10 9 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 30 vdc, p out = 12 w avg., and d = 14%. mttf calculator available at http:/www.freescale.com/rf. select tools/ software/application software/calculators to access the mttf calcu? lators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 10 8 wimax test signal 10 0.0001 100 0 peak ?to?average (db) figure 13. ofdm 802.16d test signal 10 1 0.1 0.01 0.001 24 68 probability (%) input signal compressed output signal @ 12 w avg. p out 802.16d, 64 qam 3 / 4 , 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 7 mhz channel bw 7.2 1.8 5.4 3.6 0 ?1.8 ?3.6 ?5.4 ?9 9 f, frequency (mhz) figure 14. wimax spectrum mask specifications ?7.2 point c point c system type g point b point b point d point d
MRF7S38075HR3 mrf7s38075hsr3 9 rf device data freescale semiconductor z o = 25 z load z source f = 3600 mhz f = 3400 mhz f = 3400 mhz f = 3600 mhz v dd = 30 vdc, i dq = 900 ma, p out = 12 w avg. f mhz z source z load 3400 20.70 + j14.63 5.63 - j5.17 3425 20.22 + j12.38 5.44 - j5.10 3450 19.02 + j10.82 5.23 - j4.97 3475 17.58 + j9.95 4.98 - j4.83 3500 16.28 + j9.46 4.73 - j4.66 3525 14.97 + j9.47 4.50 - j4.50 3550 13.94 + j9.49 4.22 - j4.33 3575 13.11 + j9.66 3.97 - j4.13 3600 12.45 + j9.98 3.73 - j3.89 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor MRF7S38075HR3 mrf7s38075hsr3 package dimensions case 465 - 06 issue g notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) ni - 780 mrf7s38075h case 465a - 06 issue h notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ? ? ? 0.040 ? ? ? 1.02 z ? ? ? 0.030 ? ? ? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) ni - 780s mrf7s38075hs
MRF7S38075HR3 mrf7s38075hsr3 11 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 aug. 2007 ? initial release of data sheet
12 rf device data freescale semiconductor MRF7S38075HR3 mrf7s38075hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf7s38075h rev. 0, 8/2007

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